| Title | Author(s) | Issue date | ???itemlist.??? |
| Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing | Kapetanakis, E.; Normand, P.; Tsoukalas, D.; Beltsios, K.; Stoemenos, J.; Zhang, S.; van den Berg, J. | 24-Nov-2015 | - |
| Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis | Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Tsoukalas, D.; Beltsios, K.; Cherkashin, N.; Bonafos, C.; Benassayag, G.; Coffin, H.; Claverie, A.; Soncini, V.; Agarwal, A.; Ameen, M. | 24-Nov-2015 | - |
| Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis | Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Carrada, M.; Cherkashin, N.; Soncini, V.; Agarwal, A.; Sohl, C.; Ameen, M. | 24-Nov-2015 | - |
| Evolution and control of the structure of a SiO2/semiconductor nanoelectronics material | Beltsios, K.; Normand, P.; Kapetanakis, E.; Tsoukalas, D.; Travlos, A. | 24-Nov-2015 | - |
| Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films | Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Van Den Berg, J.; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L. | 24-Nov-2015 | - |
| Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides | Kapetanakis, E.; Normand, P.; Tsoukalas, D.; Beltsios, K. | 24-Nov-2015 | - |
| MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation | Normand, P.; Kapetanakis, E.; Tsoukalas, D.; Kamoulakos, G.; Beltsios, K.; Van den Berg, J.; Zhang, S. | 24-Nov-2015 | - |
| MOS memory structures by very-low-energy-implanted Si in thin SiO2 | Dimitrakis, P.; Kapetanakis, E.; Normand, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Chassaing, D.; Carrada, M.; Soncini, V. | 24-Nov-2015 | - |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications | Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Van Den Berg, J. A.; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M. | 24-Nov-2015 | - |
| Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications | Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Coffin, H.; Benassayag, G.; Claverie, A.; Soncini, V.; Agarwal, A.; Sohl, C.; Ameen, M. | 24-Nov-2015 | - |
| Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis | Kapetanakis, E.; Normand, P.; Tsoukalas, D.; Beltsios, K. | 24-Nov-2015 | - |
| Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques | Normand, P.; Kapetanakis, E.; Tsoukalas, D.; Tserepi, A.; Tsoi, E.; Beltsios, K.; Aidinis, K.; Zhang, S.; van den Berg, J. | 24-Nov-2015 | - |
