Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13882| Title: | Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | nanocrystals,nanocrystal memory,nonvolatile memory,ion beam synthesis,ion implantation,2-d arrays,implantation |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13882 |
| ISSN: | 0167-9317 |
| Link: | <Go to ISI>://000183842100086 http://ac.els-cdn.com/S0167931703001242/1-s2.0-S0167931703001242-main.pdf?_tid=a33ecd2d25e8781b3a168a1a69b04e4e&acdnat=1339662580_d1bedd80578b4e7d3378145e0d3fed1c |
| Publisher: | Elsevier |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2003-Effects of annealing conditions.pdf | 175.94 kB | Adobe PDF | View/Open Request a copy |
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