1. Repository of OAI
  2. ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
  3. Σχολή Θετικών Επιστημών
  4. Τμήμα Μηχανικών Επιστήμης Υλικών
  5. Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
Ελληνικά   English  
Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13882
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNormand, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorDimitrakis, P.en
dc.contributor.authorSkarlatos, D.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorBenassayag, G.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorCarrada, M.en
dc.contributor.authorCherkashin, N.en
dc.contributor.authorSoncini, V.en
dc.contributor.authorAgarwal, A.en
dc.contributor.authorSohl, C.en
dc.contributor.authorAmeen, M.en
dc.date.accessioned2015-11-24T17:33:38Z-
dc.date.available2015-11-24T17:33:38Z-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13882-
dc.rightsDefault Licence-
dc.subjectnanocrystalsen
dc.subjectnanocrystal memoryen
dc.subjectnonvolatile memoryen
dc.subjection beam synthesisen
dc.subjection implantationen
dc.subject2-d arraysen
dc.subjectimplantationen
dc.titleEffects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesisen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1016/S0167-9317(03)00124-2-
heal.identifier.secondary<Go to ISI>://000183842100086-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0167931703001242/1-s2.0-S0167931703001242-main.pdf?_tid=a33ecd2d25e8781b3a168a1a69b04e4e&acdnat=1339662580_d1bedd80578b4e7d3378145e0d3fed1c-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2003-
heal.abstractThe structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals are reported fabricated by low-energy silicon implantation and with subsequent annealing in inert and diluted oxygen. Thermal treatment in diluted oxygen increases the thickness of the control oxide, does not affect significantly the size of the nanocrystals, and improves the integrity of the oxide. As a result, strong charge storage effects at low gate voltages and enhanced charge retention times are observed through electrical measurements of MOS capacitors. These results indicate that a combination of low-energy silicon implants and annealing in diluted oxygen permits the fabrication of low-voltage nonvolatile memory devices. (C) 2003 Elsevier Science B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Show simple item record
Files in This Item:
File Description SizeFormat 
Beltsios-2003-Effects of annealing conditions.pdf175.94 kBAdobe PDFView/Open    Request a copy
Show simple item record  


This item is licensed under a Creative Commons License Creative Commons