Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14062| Title: | Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | si,implantation,nanocrystals,memory,single electron tunneling,charge storage,silicon nanocrystals,ion-implantation,thermal sio2,2-d arrays,states |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/14062 |
| ISSN: | 0167-9317 |
| Link: | <Go to ISI>://000176594700068 |
| Publisher: | Elsevier |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2002-Influence of implantation.pdf | 136.33 kB | Adobe PDF | View/Open Request a copy |
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