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https://olympias.lib.uoi.gr/jspui/handle/123456789/14062Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kapetanakis, E. | en |
| dc.contributor.author | Normand, P. | en |
| dc.contributor.author | Tsoukalas, D. | en |
| dc.contributor.author | Beltsios, K. | en |
| dc.date.accessioned | 2015-11-24T17:34:58Z | - |
| dc.date.available | 2015-11-24T17:34:58Z | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14062 | - |
| dc.rights | Default Licence | - |
| dc.subject | si | en |
| dc.subject | implantation | en |
| dc.subject | nanocrystals | en |
| dc.subject | memory | en |
| dc.subject | single electron tunneling | en |
| dc.subject | charge storage | en |
| dc.subject | silicon nanocrystals | en |
| dc.subject | ion-implantation | en |
| dc.subject | thermal sio2 | en |
| dc.subject | 2-d arrays | en |
| dc.subject | states | en |
| dc.title | Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000176594700068 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | The charge storage properties of n-channel MOS transistors with 1 keV Si implanted gate oxides are investigated for 1 and 2 X 10(16) cm(-2) Si densities through gate bias (V-g) and time (t) dependent source-drain current (Is) measurements. Low dose implanted devices exhibit a continuous (trap-like) charge storage process under both static and dynamic conditions in contrast to the high dose implanted case, where injection of a fixed amount of electrons into the Si nanocrystals at low electric fields leads to step-like I-ds-t characteristics and discrete threshold voltage shifts versus V-g at room temperature. These findings can be related to the spatial arrangement and structural state of the implanted Si material after annealing as deduced by a TEM study. (C) 2002 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Microelectronic Engineering | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2002-Influence of implantation.pdf | 136.33 kB | Adobe PDF | View/Open Request a copy |
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