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Skuras, E.
6
Long, A. R.
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Stanley, C. R.
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Vogele, B.
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Holland, M. C.
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Singleton, J.
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MacKinnon, A.
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van der Burgt, M.
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Yaguchi, H.
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Beall, R. B.
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gaas
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delta-doped gaas
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mbe
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si
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absorption
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delta-doped semiconductor
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doping layers
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electron-concentration
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insb
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mobilities
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journalArticle
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1999
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ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
Σχολή Θετικών Επιστημών
Τμήμα Μηχανικών Επιστήμης Υλικών
Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
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Subband Dependent Mobilities and Carrier Saturation Mechanisms in Thin Si Doping Layers in Gaas in the High-Density Limit (Journal article)
Surface segregation of Si in delta-doped In0.53Ga0.47As grown by molecular beam epitaxy (Journal article)
1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy (Journal article)
Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping (Journal article)
Quantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam Epitaxy (Journal article)
Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48As (Journal article)
Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxy (Journal article)