Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13758| Title: | 1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | gaas,modfets,si |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13758 |
| ISSN: | 0003-6951 |
| Link: | <Go to ISI>://A1996TU82800022 |
| Publisher: | American Institute of Physics |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1996-K Shu.pdf | 392.28 kB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License
