Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14555| Title: | Subband Dependent Mobilities and Carrier Saturation Mechanisms in Thin Si Doping Layers in Gaas in the High-Density Limit |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/14555 |
| ISSN: | 0268-1242 |
| Link: | <Go to ISI>://A1991FT81400024 |
| Publisher: | IOP Publishing Ltd |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1991-Subband dependent mobilities.pdf | 726.35 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
