Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13741| Title: | Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | delta-doped gaas,insb,absorption,mbe |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13741 |
| ISSN: | 0003-6951 |
| Link: | <Go to ISI>://000078571400026 |
| Publisher: | American Institute of Physics |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1999-Cha.pdf | 384.19 kB | Adobe PDF | View/Open |
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