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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Long, A. R. | en |
| dc.contributor.author | Vogele, B. | en |
| dc.contributor.author | Holland, M. C. | en |
| dc.contributor.author | Stanley, C. R. | en |
| dc.contributor.author | Johnson, E. A. | en |
| dc.contributor.author | MacKinnon, A. | en |
| dc.date.accessioned | 2015-11-24T17:32:31Z | - |
| dc.date.available | 2015-11-24T17:32:31Z | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13741 | - |
| dc.rights | Default Licence | - |
| dc.subject | delta-doped gaas | en |
| dc.subject | insb | en |
| dc.subject | absorption | en |
| dc.subject | mbe | en |
| dc.title | Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.123427 | - |
| heal.identifier.secondary | <Go to ISI>://000078571400026 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1999 | - |
| heal.abstract | Charge depletion from 20 monolayers of n(+)-In0.53Ga0.47As, uniformly doped with Si donors and embedded within Be-doped In0.53Ga0.47As, has been studied at 1.2 K by magnetotransport measurements. Electron subband energies and densities associated with the n(+)-In0.53Ga0.47As potential well prove sensitive to the presence of the acceptors at concentrations up to 3 X 10(16) cm(-3). Agreement between the experimental data and the electronic subband structure calculated self-consistently by solving the one-dimensional Schrodinger and Poisson equations is excellent. The results suggest that intentional background acceptor doping could be a useful mechanism for tuning subband fillings and energies in potential wells formed by highly confined donors. (C) 1999 American Institute of Physics. [S0003-6951(99)00807-4]. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1999-Cha.pdf | 384.19 kB | Adobe PDF | View/Open |
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