Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/17106| Title: | SILC decay in La(2)O(3) gate dielectrics grown on Ge substrates subjected to constant voltage stress |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | charge trapping,defects generation,silc,rare-earth oxides,la(2)o(3),ge substrates,dielectric relaxation,cvs,induced leakage current,electron injection,trap generation,oxide-films,time-decay,breakdown,stacks,hfo2,relaxation,interface |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/17106 |
| ISSN: | 0038-1101 |
| Link: | <Go to ISI>://000280322300025 http://ac.els-cdn.com/S0038110110001401/1-s2.0-S0038110110001401-main.pdf?_tid=8d8c326825565fdf4027f5c19c7807ce&acdnat=1334220064_8bf892907990f64279f3f34334850942 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2010-SILC decay in La(2)O.pdf | 794.47 kB | Adobe PDF | View/Open Request a copy |
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