Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/16414| Title: | Current instabilities in rare-earth oxides-HfO(2) gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell-Wagner instabilities and dielectrics relaxation |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | induced leakage current,thin-films,transport,mosfets |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/16414 |
| ISSN: | 1071-1023 |
| Link: | <Go to ISI>://000286679400074 http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD900002900000101AB06000001 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2011-Current instabilitie.pdf | 677.44 kB | Adobe PDF | View/Open Request a copy |
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