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https://olympias.lib.uoi.gr/jspui/handle/123456789/16414Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rahman, M. S. | en |
| dc.contributor.author | Evangelou, E. K. | en |
| dc.contributor.author | Dimoulas, A. | en |
| dc.contributor.author | Mavrou, G. | en |
| dc.contributor.author | Galata, S. | en |
| dc.date.accessioned | 2015-11-24T18:31:01Z | - |
| dc.date.available | 2015-11-24T18:31:01Z | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16414 | - |
| dc.rights | Default Licence | - |
| dc.subject | induced leakage current | en |
| dc.subject | thin-films | en |
| dc.subject | transport | en |
| dc.subject | mosfets | en |
| dc.title | Current instabilities in rare-earth oxides-HfO(2) gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell-Wagner instabilities and dielectrics relaxation | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1116/1.3532946 | - |
| heal.identifier.secondary | <Go to ISI>://000286679400074 | - |
| heal.identifier.secondary | http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD900002900000101AB06000001 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2011 | - |
| heal.abstract | The authors report the current instabilities in rare-earth oxides-HfO(2) gate stacks grown on Ge (001) based metal-oxide-semiconductor devices under constant voltage stress (CVS). The devices have been subjected to CVS and show relaxation effect and charge accumulation/trapping at the interface of the high-k bilayers known as Maxwell-Wagner (MW) polarization; both cause current instabilities (i.e., current decay). The experimental data can only be explained when co-occurrent effects of MW instability and dielectric relaxation are taken into consideration. On the contrary, any single effect alone is unable to fit and/or explain the results completely. It is interesting that these effects show field dependent behavior; that is, at low CVS, the authors observe the current instabilities (follow J similar to t(-n) law), whereas at higher field, the charge trapping and/or the creation of new defects in the oxides, which eventually lead to breakdown, are significant. These results are also confirmed by capacitance-voltage (C-V(g)) measurements in respective conditions. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3532946] | en |
| heal.journalName | Journal of Vacuum Science & Technology B | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2011-Current instabilitie.pdf | 677.44 kB | Adobe PDF | View/Open Request a copy |
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