Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/16256| Title: | Electrical properties of La(2)O(3) and HfO(2)/La(2)O(3) gate dielectrics for germanium metal-oxide-semiconductor devices |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | ge surface passivation,beam deposition,mos dielectrics,stacks,capacitors |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/16256 |
| ISSN: | 0021-8979 |
| Link: | <Go to ISI>://000252890700097 http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000001014506000001 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Mavrou-2008-Electrical propertie.pdf | 1.29 MB | Adobe PDF | View/Open Request a copy |
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