Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/15935| Title: | Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO(2)/Dy(2)O(3) gate stacks grown on Ge (100) substrates |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | dielectric-relaxation,mos capacitors |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/15935 |
| ISSN: | 1071-1023 |
| Link: | <Go to ISI>://000265839000086 http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000027000001000439000001 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2009-Investigation of vol.pdf | 299.48 kB | Adobe PDF | View/Open Request a copy |
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