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https://olympias.lib.uoi.gr/jspui/handle/123456789/15935Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rahman, M. S. | en |
| dc.contributor.author | Evangelou, E. K. | en |
| dc.contributor.author | Androulidakis, I. I. | en |
| dc.contributor.author | Dimoulas, A. | en |
| dc.contributor.author | Mavrou, G. | en |
| dc.contributor.author | Tsipas, P. | en |
| dc.date.accessioned | 2015-11-24T18:26:42Z | - |
| dc.date.available | 2015-11-24T18:26:42Z | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/15935 | - |
| dc.rights | Default Licence | - |
| dc.subject | dielectric-relaxation | en |
| dc.subject | mos capacitors | en |
| dc.title | Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO(2)/Dy(2)O(3) gate stacks grown on Ge (100) substrates | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1116/1.3025912 | - |
| heal.identifier.secondary | <Go to ISI>://000265839000086 | - |
| heal.identifier.secondary | http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000027000001000439000001 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2009 | - |
| heal.abstract | Germanium is a very promising material and has an extra advantage due to its higher mobility than silicon. At the same time, high-kappa gate dielectrics such as HfO(2) are already used for the replacement of SiO(2) in advanced complementary metal-oxide-semiconductor (MOS) devices. A buffer interfacial layer is required to have better interfacial quality between HfO(2) and the semiconductor substrate. In the present work the authors investigate the voltage dependent relaxation effects and charge trapping characteristics of Pt/HfO(2)/Dy(2)O(3)/p-Ge MOS devices. The devices have been subjected to constant voltage stress and show relaxation effects in the whole range of applied stress voltages (-1 to -5 V). Charge trapping is negligible at low stress field while at higher fields (>4 MV/cm) it is significant. Also interesting is the fact that the trapped. charge is negative at low stress fields but changes to positive at higher fields. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025912] | en |
| heal.journalName | Journal of Vacuum Science & Technology B | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2009-Investigation of vol.pdf | 299.48 kB | Adobe PDF | View/Open Request a copy |
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