Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/10704| Title: | Device simulation of a n-DMOS cell with trench isolation |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικής |
| Keywords: | trench isolation,drift mosfet,high voltage device,device simulation |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/10704 |
| ISSN: | 0026-2692 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| tsiatouhas-2001-Device simulation of a n-DMOS cell with trench isolation.pdf | 863.52 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
