Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/10704
Title: | Device simulation of a n-DMOS cell with trench isolation |
Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικής |
Keywords: | trench isolation,drift mosfet,high voltage device,device simulation |
URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/10704 |
ISSN: | 0026-2692 |
Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
File | Description | Size | Format | |
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tsiatouhas-2001-Device simulation of a n-DMOS cell with trench isolation.pdf | 863.52 kB | Adobe PDF | View/Open Request a copy |
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