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Browsing by Author Johnson, E. A.

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Showing results 1 to 7 of 7
TitleAuthor(s)Issue date???itemlist.???
1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxyMcElhinney, M.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Skuras, E.; Long, A. R.; Johnson, E. A.24-Nov-2015-
Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor dopingSkuras, E.; Long, A. R.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Johnson, E. A.; MacKinnon, A.24-Nov-2015-
Quantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam EpitaxyMcelhinney, M.; Skuras, E.; Holmes, S. N.; Johnson, E. A.; Long, A. R.; Stanley, C. R.24-Nov-2015-
Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48AsSkuras, E.; Stanley, C. R.; Long, A. R.; Johnson, E. A.; MacKinnon, A.; Yaguchi, H.; van der Burgt, M.; Singleton, J.24-Nov-2015-
Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxySkuras, E.; Long, A. R.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Johnson, E. A.; van der Burgt, M.; Yaguchi, H.; Singleton, J.24-Nov-2015-
Subband Dependent Mobilities and Carrier Saturation Mechanisms in Thin Si Doping Layers in Gaas in the High-Density LimitSkuras, E.; Kumar, R.; Williams, R. L.; Stradling, R. A.; Dmochowski, J. E.; Johnson, E. A.; Mackinnon, A.; Harris, J. J.; Beall, R. B.; Skierbeszewski, C.; Singleton, J.; Vanderwel, P. J.; Wisniewski, P.24-Nov-2015-
Surface segregation of Si in delta-doped In0.53Ga0.47As grown by molecular beam epitaxyVogele, B.; Stanley, C. R.; Skuras, E.; Long, A. R.; Johnson, E. A.24-Nov-2015-
Showing results 1 to 7 of 7