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Author
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Johnson, E. A.
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Long, A. R.
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Skuras, E.
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Stanley, C. R.
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Holland, M. C.
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MacKinnon, A.
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McElhinney, M.
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Singleton, J.
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van der Burgt, M.
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Yaguchi, H.
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gaas
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mbe
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absorption
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delta-doped gaas
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delta-doped semiconductor
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doping layers
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electron-concentration
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insb
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mobility
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journalArticle
Date
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1999
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1997
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1996
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ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
Σχολή Θετικών Επιστημών
Τμήμα Μηχανικών Επιστήμης Υλικών
Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
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Surface segregation of Si in delta-doped In0.53Ga0.47As grown by molecular beam epitaxy (Journal article)
1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy (Journal article)
Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping (Journal article)
Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxy (Journal article)