Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/17271| Title: | Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd(2)O(3)/Ge capacitors |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | germanium,rare earth oxides,nibe,electrical properties,interface states,bulk states,atomic-layer deposition,gate dielectrics,beam deposition,ge(100),si,si(100) |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/17271 |
| ISSN: | 0038-1101 |
| Link: | <Go to ISI>://000247900700023 http://ac.els-cdn.com/S003811010600342X/1-s2.0-S003811010600342X-main.pdf?_tid=eb6eaee8d316fecf2a8c148e75be5fde&acdnat=1334219937_c37cbba1ca677e0f6a50cedf5c078d4a |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Evangelou-2007-Rare earth oxides as.pdf | 228.42 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
