1. Repository of OAI
  2. ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
  3. Σχολή Επιστημών Υγείας
  4. Τμήμα Ιατρικής
  5. Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) - ΙΑΤ
Ελληνικά   English  
Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/18812
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDhamodaran, S.en
dc.contributor.authorSathish, N.en
dc.contributor.authorPathak, A. P.en
dc.contributor.authorKhan, S. A.en
dc.contributor.authorAvasthi, D. K.en
dc.contributor.authorSrinivasan, T.en
dc.contributor.authorMuralidharan, R.en
dc.contributor.authorKesavamoorthy, R.en
dc.contributor.authorEmfietzoglou, D.en
dc.date.accessioned2015-11-24T18:55:07Z-
dc.date.available2015-11-24T18:55:07Z-
dc.identifier.issn0953-8984-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/18812-
dc.rightsDefault Licence-
dc.titleRaman and AFM studies of swift heavy ion irradiated InGaAs/GaAs heterostructuresen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primary10.1088/0953-8984/18/17/003-
heal.identifier.secondaryhttp://www.ncbi.nlm.nih.gov/pubmed/21690769-
heal.identifier.secondaryhttp://iopscience.iop.org/0953-8984/18/17/003/pdf/0953-8984_18_17_003.pdf-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών Υγείας. Τμήμα Ιατρικήςel
heal.publicationDate2006-
heal.abstractThe effect of swift heavy ion (SHI) irradiation on InGaAs/GaAs heterostructures is studied using Raman spectroscopy and atomic force microscopy (AFM). The structures consist of molecular beam epitaxy (MBE) grown InGaAs layers on GaAs(001), having layer thicknesses of 12, 36, 60 and 96 nm. After irradiation, the GaAs type longitudinal optical (LO) mode blue shifted to higher frequency in thin samples and red shifted towards lower frequency in thick samples. These results are discussed invoking the penetration depth of the probe radiation (lambda = 514.5 nm) in InGaAs. Deconvoluting the Raman spectra of thin samples indicates a compressive strain developed in the substrate, close to the interface upon irradiation. This modification and diffusion of indium across the interface results in an increase of strain and reduction of the defect densities in the InGaAs layer. The variations in FWHM of the Raman modes are discussed in detail. The surface morphology of these heterostructures has been studied by AFM before and after SHI irradiation. These studies, combined with Raman results, help to identify different relaxation regimes.en
heal.journalNameJ Phys Condens Matteren
heal.journalTypepeer-reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) - ΙΑΤ

Show simple item record
Files in This Item:
File Description SizeFormat 
Dhamodaran-2006-Raman and AFM studie.pdf353.16 kBAdobe PDFView/Open    Request a copy
Show simple item record  


This item is licensed under a Creative Commons License Creative Commons