Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/17400Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bloch, P. | en |
| dc.contributor.author | Peisert, A. | en |
| dc.contributor.author | Cheremukhin, A. | en |
| dc.contributor.author | Dmitriev, A. | en |
| dc.contributor.author | Zamiatin, N. | en |
| dc.contributor.author | Go, A. | en |
| dc.contributor.author | Asimidis, A. | en |
| dc.contributor.author | Evangelou, I. | en |
| dc.contributor.author | Kokkas, P. | en |
| dc.contributor.author | Manthos, N. | en |
| dc.date.accessioned | 2015-11-24T18:39:04Z | - |
| dc.date.available | 2015-11-24T18:39:04Z | - |
| dc.identifier.issn | 0168-9002 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/17400 | - |
| dc.rights | Default Licence | - |
| dc.subject | cms | en |
| dc.subject | preshower | en |
| dc.subject | silicon strips | en |
| dc.subject | radiation hardness | en |
| dc.subject | high fluence | en |
| dc.subject | charge collection efficiency | en |
| dc.subject | silicon microstrip detectors | en |
| dc.subject | strip detectors | en |
| dc.subject | electronics | en |
| dc.subject | readout | en |
| dc.subject | protons | en |
| dc.subject | cms | en |
| dc.title | Performance of Si sensors irradiated to 5 x 10(14) n/cm(2) | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | DOI 10.1016/j.nima.2003.09.058 | - |
| heal.identifier.secondary | <Go to ISI>://000188503500012 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S016890020302847X/1-s2.0-S016890020302847X-main.pdf?_tid=fd1dc09552152bd291e15a511f2ff033&acdnat=1334228557_282ce4cb46ec7eb676943c2f5f335602 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2004 | - |
| heal.abstract | The expected particle fluence in the inner part of the CMS Preshower is calculated to be 1.6 x 10(14) cm(-2) for neutrons and 0.4 x 10(14) cm(-2) for charged hadrons. Since the error of the calculation is high and/or unexpected accidental beam misalignments might happen we have irradiated Preshower silicon sensors to fluences up to 5 x 10(14) n/cm(2) to verify that they hold voltages necessary to reach the full charge collection efficiency. All irradiated sensors showed no signs of breakdown up to 1000 V, the maximum voltage applied. All but one display a sufficiently stable charge collection efficiency up to 1000 V. No noisy channels were observed at the extreme voltages. The measured charge collection efficiency was 71 +/- 12% and 59 +/- 12% for sensors irradiated to 3 x 10(14) and 5 x 10(14) n/cm(2), respectively. These values are consistent with the extrapolation from previous measurements made on sensors irradiated to 2.3 x 10(14) n/cm(2) The work presents the results of static and dynamic measurements and shows that our design and the technology are very robust. (C) 2003 Elsevier B.V. All rights reserved. | en |
| heal.journalName | Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Bloch-2004-Performance of Si se.pdf | 217.91 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
