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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Galata, S. F. | en |
| dc.contributor.author | Evangelou, E. K. | en |
| dc.contributor.author | Panayiotatos, Y. | en |
| dc.contributor.author | Sotiropoulos, A. | en |
| dc.contributor.author | Dimoulas, A. | en |
| dc.date.accessioned | 2015-11-24T18:38:32Z | - |
| dc.date.available | 2015-11-24T18:38:32Z | - |
| dc.identifier.issn | 0026-2714 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/17355 | - |
| dc.rights | Default Licence | - |
| dc.title | Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | DOI 10.1016/j.microrel.2007.01.023 | - |
| heal.identifier.secondary | <Go to ISI>://000248663300013 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0026271407000297/1-s2.0-S0026271407000297-main.pdf?_tid=c1047680852442fee882b78cc7d88e2c&acdnat=1334219928_a291296b13d735647ddeb63ed743d05e | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2007 | - |
| heal.abstract | Germanium MOS transistors with high-k gates are good alternatives for the replacement of SiO2 in order to improve the performance of modern devices. Especially rare-earth oxides on germanium deposited by molecular beam deposition (MBD) have shown improved electrical properties compared to previous used HfO2 with a germanium oxynitride (GeON) interfacial layer. In this work we report on the influence of ex situ post-annealing treatment with forming gas on the electrical characteristics of LaAlO3/Al2O3/nGe and CeO2/nGe MIS capacitors. We have observed an improvement of the electrical characteristics after forming gas anneal (FGA) for LaAlO3/Al2O3/ nGe in contrast to CeO2/nGe which shows no clear trend regarding the influence of FGA. (C) 2007 Elsevier Ltd. All rights reserved. | en |
| heal.journalName | Microelectronics Reliability | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Galata-2007-Post deposition anne.pdf | 409.19 kB | Adobe PDF | View/Open Request a copy |
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