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dc.contributor.authorLogothetidis, S.en
dc.contributor.authorEvangelou, E.en
dc.contributor.authorKonofaos, N.en
dc.date.accessioned2015-11-24T18:38:20Z-
dc.date.available2015-11-24T18:38:20Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/17320-
dc.rightsDefault Licence-
dc.subjectamorphous-carbonen
dc.subjectdiamonden
dc.titleProperties and density of states of the interface between silicon and carbon films rich in sp(3) bondsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.secondary<Go to ISI>://A1997YG47300051-
heal.identifier.secondaryhttp://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000082000010005017000001-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.publicationDate1997-
heal.abstractThe interface states between n-type Si and amorphous carbon films rich in sp(3) bonds grown by rf magnetron sputtering at room temperature have been examined. The investigation aimed to examine the effects of the low substrate temperature and the absence of hydrogen during the growth process on the density of interface states. Thus, comparing the values of the interface states to those reported for devices grown by other techniques, the best possible interface required for electronic applications is suggested. The conductance technique was used to measure the density of the interface states. This method revealed a value of the traps for the n-Si(100)-carbon interface of the order of 10(10) cm(-2) eV(-1), nearly one order of magnitude lower than any other previously reported for the same configuration. (C) 1997 American Institute of Physics.en
heal.journalNameJournal of Applied Physicsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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