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https://olympias.lib.uoi.gr/jspui/handle/123456789/17133Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sotiropoulos, A. K. | en |
| dc.contributor.author | Kamaratos, A. | en |
| dc.date.accessioned | 2015-11-24T18:35:46Z | - |
| dc.date.available | 2015-11-24T18:35:46Z | - |
| dc.identifier.issn | 0038-1098 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/17133 | - |
| dc.rights | Default Licence | - |
| dc.subject | alkali | en |
| dc.subject | selenium | en |
| dc.subject | silicon | en |
| dc.subject | adsorption | en |
| dc.subject | auger electron spectroscopy (aes) | en |
| dc.subject | low energy diffraction (leed) | en |
| dc.subject | thermal desorption spectroscopy (tds) | en |
| dc.subject | work function | en |
| dc.subject | ni(100) surfaces | en |
| dc.subject | oxygen | en |
| dc.subject | coadsorption | en |
| dc.subject | desorption | en |
| dc.subject | oxidation | en |
| dc.subject | se | en |
| dc.title | Selenium adsorption on Cs-covered Si(100) 2x1 surfaces | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | DOI 10.1016/j.scc.2003.12.009 | - |
| heal.identifier.secondary | <Go to ISI>://000189081700005 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0038109803010895/1-s2.0-S0038109803010895-main.pdf?_tid=83241c8c9ab907b912c8a95a9d6893ed&acdnat=1334223731_97253984d46dde2a441ac5d56f1e438d | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2004 | - |
| heal.abstract | This report involves the study of Se adsorption on caesiated Si(100) 2 x 1 surfaces in ultra high vacuum (UHV) using low energy electron diffraction, Auger electron spectroscopy, thermal desorption spectroscopy and work function measurements. Selenium atoms on Cs/Si(100) 2 x 1 surface adsorb initially on uncaesiated portions of Si and subsequently on the Cs overlayer. The presence of Se increases the binding energy of Cs on Si(100). For Cs and Se coverages above 0.5 ml CsSe and CsxSeySiz, compound formation was observed. The coadsorption of Se and Cs induces a high degree of surface disorder, while desorption most probably causes surface etching. The presence of Cs on Si(100) 2 x 1 surfaces prevents the diffusion of Se into the Si substrate and greatly suppresses the formation of SiSe2 and SiSe3, detected when Se is adsorbed on clean Si(100) 2 x 1 surfaces. (C) 2003 Elsevier Ltd. All rights reserved. | en |
| heal.journalName | Solid State Communications | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Sotiropoulos-2004-Selenium adsorption.pdf | 179.5 kB | Adobe PDF | View/Open Request a copy |
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