Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/16998
Title: | Structural and electrical properties of HfO(2)/Dy(2)O(3) gate stacks on Ge substrates |
Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
Keywords: | germanium,dy(2)o(3),hfo(2),rare-earth oxides,transmission electron microscopy,x-ray reflectivity,electrical properties and measurements,germanium mos dielectrics,hfo2 layers,interface,oxide,capacitors,mosfets,devices,passivation,deposition,surfaces |
URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/16998 |
ISSN: | 0040-6090 |
Link: | <Go to ISI>://000278064600068 http://ac.els-cdn.com/S0040609009018446/1-s2.0-S0040609009018446-main.pdf?_tid=14effd51ea3786a451c9d0943ff4e602&acdnat=1334220025_508eb8dc63afd1ec2df42bb61b752d54 |
Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
File | Description | Size | Format | |
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Evangelou-2010-Structural and elect.pdf | 580.01 kB | Adobe PDF | View/Open Request a copy |
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