Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/16979| Title: | Study of stress-induced leakage current (SILC) in HfO(2)/Dy(2)O(3) high-kappa gate stacks on germanium |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | silicon dioxide films,high-k dielectrics,mos devices,nm oxides,mechanism,breakdown,model,time,capacitors,conduction |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/16979 |
| ISSN: | 0026-2714 |
| Link: | <Go to ISI>://000263208400005 http://ac.els-cdn.com/S002627140800382X/1-s2.0-S002627140800382X-main.pdf?_tid=f8cb8b7238e656e99f50d63f326f9eb6&acdnat=1334220047_7ebade6d5e542d37c8a52625e1f11cf4 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Rahman-2009-Study of stress-indu.pdf | 449.56 kB | Adobe PDF | View/Open Request a copy |
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