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dc.contributor.authorPapageorgopoulos, C.en
dc.contributor.authorKamaratos, M.en
dc.date.accessioned2015-11-24T18:34:12Z-
dc.date.available2015-11-24T18:34:12Z-
dc.identifier.issn0953-8984-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16889-
dc.rightsDefault Licence-
dc.subjectcatalytic-oxidationen
dc.subjectalkali-metalsen
dc.subjectcsen
dc.subjectadsorptionen
dc.subjectsurfacesen
dc.subjectcoadsorptionen
dc.subjectsi(100)en
dc.subjectmos2en
dc.subjecto-2en
dc.titleThe Behavior of Na on 1x1 and 7x7 Structures of Si(111) and Its Effect on the Oxidation of These Structuresen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.secondary<Go to ISI>://A1992HF56100009-
heal.identifier.secondaryhttp://iopscience.iop.org/0953-8984/4/8/009/pdf/0953-8984_4_8_009.pdf-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.publicationDate1992-
heal.abstractDeposition of Na on 1 x 1 and 7 x 7 structures of Si(111) at room temperature (RT) forms a uniform layer with a rather weak metallic character. The coverage of Na can be determined at any time of the Na deposition by a flux meter. The binding energy of Na is greater on a reconstructed 7 x 7 than on the 1 x 1 structure of a Si(111) surface. The initial dipole moment and the maximum DELTA-phi are greater for Na on the 1 x 1 structure. Near saturation Na coverage, the oxygen goes initially under the Na layer forming a Na-O-Si complex and subsequently resides on top of it. The presence of Na on Si(111) causes a drastic increase of the initial sticking coefficient of oxygen by about ten times. When oxygen is adsorbed on Na-covered Si(111) surfaces at RT and the system is heated to 700-degrees-C. Na is removed from the surface while oxygen forms SiO4 and SiO2. By repeating this cycle several times (seven) SiO2 predominates and its average thickness is about 9 angstrom. However, this thickness is smaller than when Cs is used instead of Na. This indicates that Cs is more effective as a promoter of the oxidation. However, the oxide formation occurs at a lower temperature than with Cs additives. Finally, the effect of Na on the oxidation of Si was almost the same on the 7 x 7 and 1 x 1 structures of Si(111) surfaces.en
heal.journalNameJournal of Physics-Condensed Matteren
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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