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DC Field | Value | Language |
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dc.contributor.author | Papageorgopoulos, C. | en |
dc.contributor.author | Kamaratos, M. | en |
dc.date.accessioned | 2015-11-24T18:34:12Z | - |
dc.date.available | 2015-11-24T18:34:12Z | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16889 | - |
dc.rights | Default Licence | - |
dc.subject | catalytic-oxidation | en |
dc.subject | alkali-metals | en |
dc.subject | cs | en |
dc.subject | adsorption | en |
dc.subject | surfaces | en |
dc.subject | coadsorption | en |
dc.subject | si(100) | en |
dc.subject | mos2 | en |
dc.subject | o-2 | en |
dc.title | The Behavior of Na on 1x1 and 7x7 Structures of Si(111) and Its Effect on the Oxidation of These Structures | en |
heal.type | journalArticle | - |
heal.type.en | Journal article | en |
heal.type.el | Άρθρο Περιοδικού | el |
heal.identifier.secondary | <Go to ISI>://A1992HF56100009 | - |
heal.identifier.secondary | http://iopscience.iop.org/0953-8984/4/8/009/pdf/0953-8984_4_8_009.pdf | - |
heal.language | en | - |
heal.access | campus | - |
heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
heal.publicationDate | 1992 | - |
heal.abstract | Deposition of Na on 1 x 1 and 7 x 7 structures of Si(111) at room temperature (RT) forms a uniform layer with a rather weak metallic character. The coverage of Na can be determined at any time of the Na deposition by a flux meter. The binding energy of Na is greater on a reconstructed 7 x 7 than on the 1 x 1 structure of a Si(111) surface. The initial dipole moment and the maximum DELTA-phi are greater for Na on the 1 x 1 structure. Near saturation Na coverage, the oxygen goes initially under the Na layer forming a Na-O-Si complex and subsequently resides on top of it. The presence of Na on Si(111) causes a drastic increase of the initial sticking coefficient of oxygen by about ten times. When oxygen is adsorbed on Na-covered Si(111) surfaces at RT and the system is heated to 700-degrees-C. Na is removed from the surface while oxygen forms SiO4 and SiO2. By repeating this cycle several times (seven) SiO2 predominates and its average thickness is about 9 angstrom. However, this thickness is smaller than when Cs is used instead of Na. This indicates that Cs is more effective as a promoter of the oxidation. However, the oxide formation occurs at a lower temperature than with Cs additives. Finally, the effect of Na on the oxidation of Si was almost the same on the 7 x 7 and 1 x 1 structures of Si(111) surfaces. | en |
heal.journalName | Journal of Physics-Condensed Matter | en |
heal.journalType | peer reviewed | - |
heal.fullTextAvailability | TRUE | - |
Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
File | Description | Size | Format | |
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Papageorgopoulos-1992-The Behavior of Na o.pdf | 477.92 kB | Adobe PDF | View/Open Request a copy |
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