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https://olympias.lib.uoi.gr/jspui/handle/123456789/16745Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Papageorgopoulos, A. C. | en |
| dc.contributor.author | Kamaratos, M. | en |
| dc.date.accessioned | 2015-11-24T18:33:32Z | - |
| dc.date.available | 2015-11-24T18:33:32Z | - |
| dc.identifier.issn | 0039-6028 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16745 | - |
| dc.rights | Default Licence | - |
| dc.subject | low energy electron diffraction (leed) | en |
| dc.subject | thermal desorption spectroscopy | en |
| dc.subject | work function measurements | en |
| dc.subject | surface relaxation and reconstruction | en |
| dc.subject | diffusion and migration | en |
| dc.subject | silicon | en |
| dc.subject | chalcogens | en |
| dc.subject | si(111) | en |
| dc.title | A Study of the restoration of Se/Si(111)-7 x 7 reconstructed surfaces: preservation of the bulk-terminated state | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000175557700001 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | In this work we study the role of adsorbed Se on Si(111)-7 x 7 surfaces in the heat-induced 7 x 7 - 1 x 1 phase transition of the Si(111)-7 x 7 substrate. The experiment took place in an ultra high vacuum utilizing low energy electron diffraction, thermal desorption spectroscopy (TDS) and work function measurements. The maximum deposited Se coverage was similar to1.6 ML (with the exception of 2.5 ML for some TDS measurements). Heating the Se/Si(111)7 x 7 surface at 1025 K causes the desorption of SiSe2, dominant at theta(sc) > 0.5 ML. with a calculated binding energy of E-b = 2.7 eV/atom. Increasing the temperature to 1050 K brings about the phase transition: Si(111)-7 x 7 - Si(111)1 x 1. The resulting restored Si(111)- 1 x 1 surface is preserved upon cooling to room temperature as long as the initial coverage of Se on the Si(111)-7 x 7 surface is at least theta(sc) = 0.5 ML, while Se is strongly bound to the top substrate layer at E-b = 2.9 eV/atom. The Se which preserves the Si(111) surface in its bulk terminated form saturates the free Si bonds, forming a non-symmetric adlayer. (C) 2002 Published by Elsevier Science B.V. | en |
| heal.journalName | Surface Science | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| kamaratos-2002-A Study of the restoration of SeSi111-7 x 7 reconstructed surfaces preservation.pdf | 119.08 kB | Adobe PDF | View/Open Request a copy |
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