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https://olympias.lib.uoi.gr/jspui/handle/123456789/16717Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kamaratos, M. | en |
| dc.date.accessioned | 2015-11-24T18:33:20Z | - |
| dc.date.available | 2015-11-24T18:33:20Z | - |
| dc.identifier.issn | 0169-4332 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16717 | - |
| dc.rights | Default Licence | - |
| dc.subject | alkali | en |
| dc.subject | gallium arsenide | en |
| dc.subject | oxygen | en |
| dc.subject | leed | en |
| dc.subject | aes | en |
| dc.subject | wf | en |
| dc.subject | tds | en |
| dc.subject | sims | en |
| dc.subject | photocurrent | en |
| dc.subject | negative electron affinity | en |
| dc.subject | work-function | en |
| dc.subject | gaas(100) surfaces | en |
| dc.subject | escape probability | en |
| dc.subject | cesium oxide | en |
| dc.subject | oxygen | en |
| dc.subject | photocathodes | en |
| dc.subject | oxidation | en |
| dc.subject | photoemission | en |
| dc.subject | interface | en |
| dc.title | Adsorption kinetics of the Cs-O activation layer on GaAs (100) | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000173117500009 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0169433201005840/1-s2.0-S0169433201005840-main.pdf?_tid=0fa971eff27be88d458ac2bddbe5c345&acdnat=1334223479_6af16c1643fb962dd2d99af76810939a | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2001 | - |
| heal.abstract | In this work, we study the adsorption of (molecular) oxygen on Cs-covered GaAs(100) surfaces at RT. The study took place in a multi-method UHV system using the techniques such as low energy electron diffraction (LEED), An- r electron spectroscopy (AES), work function measurements (WF), thermal desorption spectroscopy (TDS), secondary ion mass spectroscopy (SIMS) and electron stimulated desorption (ESD) spectroscopy in correlation with the photocurrent measurements. It is shown that the oxygen burrows under the Cs overlayer and interacts at low exposures with the GaAs substrate, whereas at higher exposures oxygen interacts also with Cs leading to Cs oxides. The maximum photocurrent appears after the WF minimum and before the oxidation of Cs. Our results support the dipolar model for the explanation of the negative electron affinity effect. (C) 2001 Elsevier Science B.V. All rights reserved. | en |
| heal.journalName | Applied Surface Science | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Kamaratos-2001-Adsorption kinetics.pdf | 113.06 kB | Adobe PDF | View/Open Request a copy |
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