1. Repository of OAI
  2. ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
  3. Σχολή Θετικών Επιστημών
  4. Τμήμα Φυσικής
  5. Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
Ελληνικά   English  
Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/16606
Full metadata record
DC FieldValueLanguage
dc.contributor.authorVlachos, D.en
dc.contributor.authorKamaratos, M.en
dc.contributor.authorPapageorgopoulos, C.en
dc.date.accessioned2015-11-24T18:32:44Z-
dc.date.available2015-11-24T18:32:44Z-
dc.identifier.issn0038-1098-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16606-
dc.rightsDefault Licence-
dc.subjecttransition-metal surfacesen
dc.subjectba/si(100)-2x1 interfaceen
dc.subjectwork-functionen
dc.subjectadsorptionen
dc.subjectcsen
dc.subjectoverlayeren
dc.subjectaffinityen
dc.subjectxpsen
dc.titleBa Deposition on Si(100)2x1en
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.secondary<Go to ISI>://A1994NC84200007-
heal.identifier.secondaryhttp://ac.els-cdn.com/0038109894903379/1-s2.0-0038109894903379-main.pdf?_tid=c659428b2ea302babf0a7852a6c461fd&acdnat=1334233924_b631b62228c19fa2f85a2c63eef03e05-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.publicationDate1994-
heal.abstractThe Ba deposition on Si(100)2 x 1 at room temperature has been investigated by LEED, AES, TDS, EELS and work function measurements. Ba grows, though disordered, layer by layer with a constant sticking coefficient. Barium on Si(100)2 x 1 gives rise to two adsorption states which exhibit relatively high binding energy for THETA less-than-or-equal-to 2 ML, a strong Ba-Si ionic interaction and relatively low binding energy for THETA > 2 ML where the Ba overlayer has a metallic character. Heating of the Ba-Si interface at T < 700-degrees-C promotes Ba-Si interaction, probably with a tendency to form silicide compounds. Higher temperatures cause the appearance of the 2 x 4, 2 x 1 and 2 x 3 diffraction patterns.en
heal.journalNameSolid State Communicationsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Show simple item record
Files in This Item:
File Description SizeFormat 
Vlachos-1994-Ba Deposition on Si(.pdf597.46 kBAdobe PDFView/Open    Request a copy
Show simple item record  


This item is licensed under a Creative Commons License Creative Commons