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https://olympias.lib.uoi.gr/jspui/handle/123456789/16371Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kokkoris, M. | en |
| dc.contributor.author | Vlastou, R. | en |
| dc.contributor.author | Aslanoglou, X. A. | en |
| dc.contributor.author | Kossionides, E. | en |
| dc.contributor.author | Grotzschel, R. | en |
| dc.contributor.author | Paradellis, T. | en |
| dc.date.accessioned | 2015-11-24T18:30:26Z | - |
| dc.date.available | 2015-11-24T18:30:26Z | - |
| dc.identifier.issn | 0168-583X | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16371 | - |
| dc.rights | Default Licence | - |
| dc.subject | backscattering | en |
| dc.subject | channeling | en |
| dc.subject | nuclear resonance | en |
| dc.subject | quartz crystal | en |
| dc.subject | protons | en |
| dc.subject | cross-sections | en |
| dc.subject | he ions | en |
| dc.subject | crystals | en |
| dc.subject | energy | en |
| dc.subject | silicon | en |
| dc.subject | carbon | en |
| dc.title | Determination of the stopping power of channeled protons in SiO2 in the backscattering geometry | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000166721500003 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0168583X00004328/1-s2.0-S0168583X00004328-main.pdf?_tid=319cb5aa58677c4226c53bb55ce403d7&acdnat=1334134417_705ca7cbd0a0db6fa573da9570fd08e3 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2001 | - |
| heal.abstract | Energy spectra of protons channeling along the optical axis (c-axis) of a quartz crystal in the energy region E-p = 1.7-2.5 MeV in the backscattering geometry were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in good agreement with the measured spectra. yielding electronic stopping powers For the specific crystal orientation that vary between 2.35 and 1.74 eV/A, respectively. for the energy interval in consideration. The results are compared with the ones obtained in the past for simpler crystallographic structures, namely Si [100] and Si [111], and an attempt is made to explain the occurring similarities as well as the differences. (C) 2001 Elsevier Science B.V. All rights reserved. | en |
| heal.journalName | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) - ΦΥΣ | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Kokkoris-2001-Determination of the.pdf | 359.59 kB | Adobe PDF | View/Open Request a copy |
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