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https://olympias.lib.uoi.gr/jspui/handle/123456789/16364Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Konofaos, N. | en |
| dc.contributor.author | Evangelou, E. | en |
| dc.contributor.author | Thomas, C. B. | en |
| dc.date.accessioned | 2015-11-24T18:30:22Z | - |
| dc.date.available | 2015-11-24T18:30:22Z | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16364 | - |
| dc.rights | Default Licence | - |
| dc.title | Device characterization for amorphous diamond-like carbon-silicon heterojunctions | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000076185100089 | - |
| heal.identifier.secondary | http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000084000008004634000001 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 1998 | - |
| heal.abstract | We report here on the electrical characterization of Al/a-C:H/n-Si devices, where the a-C:H films were ion implanted with boron. The current-voltage characteristics versus temperature demonstrated the creation of p-n heterojunctions and Schottky diodes. Maximum current outputs were reached faster for higher temperatures. Lower doses of boron implants produced Schottky diode characteristics, with a current saturation in the forward region due to the existing barrier. The values of the output currents increased with temperature and implanted dose. (C) 1998 American Institute of Physics. [S0021-8979(98)00120-0] | en |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Konofaos-1998-Device characterizat.pdf | 359.33 kB | Adobe PDF | View/Open Request a copy |
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