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https://olympias.lib.uoi.gr/jspui/handle/123456789/16081Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mavrou, G. | en |
| dc.contributor.author | Galata, S. F. | en |
| dc.contributor.author | Sotiropoulos, A. | en |
| dc.contributor.author | Tsipas, P. | en |
| dc.contributor.author | Panayiotatos, Y. | en |
| dc.contributor.author | Dimoulas, A. | en |
| dc.contributor.author | Evangelou, E. K. | en |
| dc.contributor.author | Seo, J. W. | en |
| dc.contributor.author | Dieker, C. | en |
| dc.date.accessioned | 2015-11-24T18:27:43Z | - |
| dc.date.available | 2015-11-24T18:27:43Z | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16081 | - |
| dc.rights | Default Licence | - |
| dc.subject | germanium | en |
| dc.subject | passivation | en |
| dc.subject | rare earth oxides | en |
| dc.title | Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | DOI 10.1016/j.mee.2007.04.036 | - |
| heal.identifier.secondary | <Go to ISI>://000247378600113 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0167931707003863/1-s2.0-S0167931707003863-main.pdf?_tid=d8a1e9a4a4ed86d1596d11ad2eb4a750&acdnat=1334220010_35706e508c25e77768ddb7076bc6f680 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2007 | - |
| heal.abstract | In this work, we investigate La2O3 as a gate dielectric candidate for Ge devices, using metal-insulator-semiconductor (MIS) structures. When the deposition temperature increases, the electrical characteristics improve with regard to dispersion in accumulation, hysteresis, stretch out, leakage current and interface state density D-it. By analyzing the CV data for films with different oxide thickness we find that the dielectric constant of La2O3 has a medium k-value of about 11. The same data indicate that there is no interfacial layer, which is confirmed by high resolution transmission electron microscopy (HRTEM) observations. These results suggest that a strong reaction with the Ge substrate may take place so that a La-Ge-O compound may form over the entire film thickness reducing the k-value. This reaction layer could be responsible for the reduction of Dit indicating good passivating properties. However, it may limit gate oxide scaling in future Ge MOS devices. | en |
| heal.journalName | Microelectronic Engineering | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Mavrou-2007-Germanium metal-insu.pdf | 1.41 MB | Adobe PDF | View/Open Request a copy |
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