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https://olympias.lib.uoi.gr/jspui/handle/123456789/15940Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kokkoris, M. | en |
| dc.contributor.author | Perdikakis, G. | en |
| dc.contributor.author | Vlastou, R. | en |
| dc.contributor.author | Papadopoulos, C. T. | en |
| dc.contributor.author | Aslanoglou, X. A. | en |
| dc.contributor.author | Posselt, M. | en |
| dc.contributor.author | Grotzschel, R. | en |
| dc.contributor.author | Harissopulos, S. | en |
| dc.contributor.author | Kossionides, S. | en |
| dc.date.accessioned | 2015-11-24T18:26:44Z | - |
| dc.date.available | 2015-11-24T18:26:44Z | - |
| dc.identifier.issn | 0168-583X | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/15940 | - |
| dc.rights | Default Licence | - |
| dc.subject | high-energy implantation | en |
| dc.subject | channeling | en |
| dc.subject | nuclear resonance | en |
| dc.subject | fluorine profiling | en |
| dc.subject | resonant nra | en |
| dc.subject | c-trim | en |
| dc.subject | nuclear-reactions | en |
| dc.subject | ion-implantation | en |
| dc.subject | defect production | en |
| dc.subject | heavy-ions | en |
| dc.subject | damage | en |
| dc.title | Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1016/S0168-583x(03)00448-8 | - |
| heal.identifier.secondary | <Go to ISI>://000182039000011 | - |
| heal.identifier.secondary | http://ac.els-cdn.com/S0168583X03004488/1-s2.0-S0168583X03004488-main.pdf?_tid=fced648e240081e086af3966e751d0ed&acdnat=1334134424_a8adaed3a13e6093e0944c2e733180b5 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.publicationDate | 2003 | - |
| heal.abstract | Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV F-19(+) ions, to a maximum fluence of approximately 1 x 10(17) particles/cm(2). The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range E-p = 950-1200 keV. The reaction F-19(p, alphay)O-16 reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature. (C) 2003 Elsevier Science B.V. All rights reserved. | en |
| heal.journalName | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) - ΦΥΣ | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Kokkoris-2003-Investigation of dee.pdf | 154.54 kB | Adobe PDF | View/Open Request a copy |
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