Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14530
Title: Structural stability, electronic and optical properties of Ni-doped 3C-SiC by first principles calculation
Institution and School/Department of submitter: Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών
Keywords: ni-doped 3c-sic,first principle,electronic property,optical property,microwave dielectric-properties,cubic silicon-carbide,combustion synthesis,magnetic-properties,sic powder,impurities,mn,1st-principles,permittivity,nanowires
URI: https://olympias.lib.uoi.gr/jspui/handle/123456789/14530
ISSN: 0925-8388
Link: <Go to ISI>://000289462600034
http://ac.els-cdn.com/S0925838811006281/1-s2.0-S0925838811006281-main.pdf?_tid=da7b68eebb23606f587063ea9dc4ad2d&acdnat=1339492772_f3c3843877644b706815febe556b8b02
Publisher: Elsevier
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Files in This Item:
File Description SizeFormat 
Dou-2011-Structural stability.pdf807.07 kBAdobe PDFView/Open    Request a copy


This item is licensed under a Creative Commons License Creative Commons