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https://olympias.lib.uoi.gr/jspui/handle/123456789/14433Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kapetanakis, E. | en |
| dc.contributor.author | Normand, P. | en |
| dc.contributor.author | Tsoukalas, D. | en |
| dc.contributor.author | Beltsios, K. | en |
| dc.date.accessioned | 2015-11-24T17:38:02Z | - |
| dc.date.available | 2015-11-24T17:38:02Z | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14433 | - |
| dc.rights | Default Licence | - |
| dc.subject | nano-crystal memory | en |
| dc.subject | si | en |
| dc.subject | implantation | en |
| dc.subject | confinement | en |
| dc.subject | states | en |
| dc.title | Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.1470262 | - |
| heal.identifier.secondary | <Go to ISI>://000174938600058 | - |
| heal.identifier.secondary | http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000015002794000001 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | We investigated the dependence of implantation dose on the charge storage characteristics of large-area n-channel metal-oxide-semiconductor field-effect transistors with 1-keV Si+-implanted gate oxides. Gate bias and time-dependent source-drain current measurements are reported. Devices implanted with 1x10(16) cm(-2) Si dose exhibit a continuous (trap-like) charge storage process under both static and dynamic conditions. In contrast, for 2x10(16) cm(-2) implanted devices, electrons are stored in Si nanocrystals in discrete units at low gate voltages, as revealed by a periodic staircase plateau of the source-drain current with a low gate voltage sweep rate, and the step-like decrease of the time-dependent monitoring of the channel current. These observations of room-temperature single-electron storage effects support the pursuit of large-area devices operating on the basis of Coulomb blockade phenomena. (C) 2002 American Institute of Physics. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2002-Room-temperature single-electron.pdf | 281.35 kB | Adobe PDF | View/Open |
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