Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14220| Title: | Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | scattering,in0.52al0.48as,states |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/14220 |
| ISSN: | 1071-1023 |
| Link: | <Go to ISI>://000170598400073 |
| Publisher: | American Vacuum Society |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-2001-Mol.pdf | 283.12 kB | Adobe PDF | View/Open Request a copy |
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