Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13787| Title: | Coupling atomistic and continuum length scales in heteroepitaxial systems: Multiscale molecular-dynamics/finite-element simulations of strain relaxation in Si/Si3N4 nanopixels |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | critical layer thickness,pyramidal quantum dots,misfit dislocations,silicon-nitride,electronic-structure,inas/gaas(111)a heteroepitaxy,si(111)/si3n4(001) interface,semiconductor heteroepitaxy,epitaxial multilayers,surface-morphology |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13787 |
| ISSN: | 1098-0121 |
| Link: | <Go to ISI>://000232229100119 |
| Publisher: | American Physical Society |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Lidorikis-2005-Coupling atomistic and continuum.pdf | 2.8 MB | Adobe PDF | View/Open |
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