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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13609
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dc.contributor.authorLidorikis, E.en
dc.contributor.authorSigalas, M. M.en
dc.contributor.authorEconomou, E.en
dc.contributor.authorSoukoulis, M.en
dc.date.accessioned2015-11-24T17:31:38Z-
dc.date.available2015-11-24T17:31:38Z-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13609-
dc.rightsDefault Licence-
dc.titleTight-Binding Parameterization for Photonic Band Gap Materialsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate1998-
heal.abstractThe idea of the linear combination of atomic orbitals method, well known from the study of electrons, is extended to the classical wave case. The Mie resonances of the isolated scatterer in the classical wave case are analogous to the atomic orbitals in the electronic case. The matrix elements of the two-dimensional tight-binding (TB) Hamiltonian are obtained by fitting to ab initio results. The transferability of the TB model is tested by reproducing accurately the band structure of different 2D lattices, with and without defects, and at two different dielectric contrasts.en
heal.publisherThe American Physical Societyen
heal.journalNamePhys Rev Letten
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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