Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/11135
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dc.contributor.authorMoisiadis, Y.en
dc.contributor.authorBouras, I.en
dc.contributor.authorEfthymiou, A.en
dc.contributor.authorPapadas, C.en
dc.date.accessioned2015-11-24T17:03:09Z-
dc.date.available2015-11-24T17:03:09Z-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/11135-
dc.rightsDefault Licence-
dc.titleFast 1V bootstrapped inverter suitable for standard CMOS technologiesen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικήςel
heal.publicationDate1999-
heal.abstractThe authors propose a novel low-voltage bootstrapped inverter, designed in a standard high V-T 0.35 mu m CMOS technology. To enhance the snitching speed of a CMOS inverter at low-Voltage operation, an NMOS device is used in the pull-up section. A bootstrapping scheme is used to avoid the V-TN reduction of the output swing.en
heal.journalNameElectronics Lettersen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)



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