Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/10960
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dc.contributor.authorTsiatouhas, Y. E.en
dc.date.accessioned2015-11-24T17:01:40Z-
dc.date.available2015-11-24T17:01:40Z-
dc.identifier.issn1549-7747-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/10960-
dc.rightsDefault Licence-
dc.subjectembedded negative voltage-level converteren
dc.subjectlevel shifteren
dc.subjectlevel conversionen
dc.subjectmos-device voltage stress relaxationen
dc.subjectcharge-pump circuitsen
dc.subjectflash memoriesen
dc.subjectword-lineen
dc.subjectdesignen
dc.subjectschemeen
dc.subjectdramsen
dc.subjectcellen
dc.subjectgeneratoren
dc.subjecteepromen
dc.subjectgateen
dc.titleA stress-relaxed negative voltage-level converteren
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1109/Tcsii.2006.886877-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικήςel
heal.publicationDate2007-
heal.abstractIn this brief, a new embedded negative voltage-level converter (level shifter) is presented. The proposed circuit can convert a positive input signal to a negative output signal with reduced or even without (depending on the application) voltage stress on the used MOS devices. The circuit has been designed in a 0.18-mu m triple-well standard CMOS technology, using double-gate-oxidethickness MOS transistors with an absolute maximum rating of 4.0 V, a nominal power supply of 1.8 V, and a required negative voltage of -3.3 V. Simulation results are provided to demonstrate the efficiency of the proposed topology. According to the results, 1.82-ns delay and 0.53-mW power consumption are reported.en
heal.journalNameIeee Transactions on Circuits and Systems Ii-Express Briefsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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