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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chrisanthopoulos, A. | en |
| dc.contributor.author | Moisiadis, Y. | en |
| dc.contributor.author | Tsiatouhas, Y. | en |
| dc.contributor.author | Arapoyanni, A. | en |
| dc.date.accessioned | 2015-11-24T17:00:14Z | - |
| dc.date.available | 2015-11-24T17:00:14Z | - |
| dc.identifier.issn | 1350-2409 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/10730 | - |
| dc.rights | Default Licence | - |
| dc.subject | sram | en |
| dc.title | Comparative study of different current mode sense amplifiers in submicron CMOS technology | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | DOI 10.1049/ip-cds:200020425 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικής | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | A comparison of different current mode sense amplifiers using 0.25 mum CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and Flash non-volatile memories. Simulation results are given regal-ding the sensing delay time for different power supply voltages V-dd and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation. while worst-case and high-temperature simulations are included, in order to expose limitations of the sensors in various operating conditions. | en |
| heal.journalName | Iee Proceedings-Circuits Devices and Systems | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
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