Browsing by Author Stanley, C. R.

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Showing results 1 to 13 of 13
TitleAuthor(s)Issue date
1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxyMcElhinney, M.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Skuras, E.; Long, A. R.; Johnson, E. A.24-Nov-2015
Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor dopingSkuras, E.; Long, A. R.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Johnson, E. A.; MacKinnon, A.24-Nov-2015
The Effect of Growth Temperature, Delta-Doping and Barrier Composition on Mobilities in Shallow Algaas-Gaas 2-Dimensional Electron GasesHolland, M. C.; Skuras, E.; Davies, J. H.; Larkin, I. A.; Long, A. R.; Stanley, C. R.24-Nov-2015
Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structuresSkuras, E.; Stanley, C. R.24-Nov-2015
Importance of symmetry breaking in two-dimensional lateral-surface superlatticesChowdhury, S.; Emeleus, C. J.; Milton, B.; Skuras, E.; Long, A. R.; Davies, J. H.; Pennelli, G.; Stanley, C. R.24-Nov-2015
Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral surface superlatticesChowdhury, S.; Long, A. R.; Skuras, E.; Davies, J. H.; Lister, K.; Pennelli, G.; Stanley, C. R.24-Nov-2015
Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potentialSkuras, E.; Pennelli, G.; Long, A. R.; Stanley, C. R.24-Nov-2015
Optimization of layer structure for InGaAs channel pseudomorphic HEMTsPearson, J. L.; Holland, M. C.; Stanley, C. R.; Long, A. R.; Skuras, E.; Asenov, A.; Davies, J. H.24-Nov-2015
Quantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam EpitaxyMcelhinney, M.; Skuras, E.; Holmes, S. N.; Johnson, E. A.; Long, A. R.; Stanley, C. R.24-Nov-2015
Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48AsSkuras, E.; Stanley, C. R.; Long, A. R.; Johnson, E. A.; MacKinnon, A.; Yaguchi, H.; van der Burgt, M.; Singleton, J.24-Nov-2015
Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxySkuras, E.; Long, A. R.; Vogele, B.; Holland, M. C.; Stanley, C. R.; Johnson, E. A.; van der Burgt, M.; Yaguchi, H.; Singleton, J.24-Nov-2015
Surface segregation of Si in delta-doped In0.53Ga0.47As grown by molecular beam epitaxyVogele, B.; Stanley, C. R.; Skuras, E.; Long, A. R.; Johnson, E. A.24-Nov-2015
Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlatticesChowdhury, S.; Skuras, E.; Emeleus, C. J.; Long, A. R.; Davies, J. H.; Pennelli, G.; Stanley, C. R.24-Nov-2015