Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13956| Title: | Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | molecular-beam epitaxy,electronic-properties,photoreflectance,inalas,in0.52al0.48as,heterojunction,ingaas,layers |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13956 |
| ISSN: | 0003-6951 |
| Link: | <Go to ISI>://000245317100109 |
| Publisher: | American Institute of Physics |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-2007-Fer.pdf | 509.81 kB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License
