Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13758
Title: 1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy
Institution and School/Department of submitter: Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών
Keywords: gaas,modfets,si
URI: https://olympias.lib.uoi.gr/jspui/handle/123456789/13758
ISSN: 0003-6951
Link: <Go to ISI>://A1996TU82800022
Publisher: American Institute of Physics
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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