1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy (Journal article)

McElhinney, M./ Vogele, B./ Holland, M. C./ Stanley, C. R./ Skuras, E./ Long, A. R./ Johnson, E. A.

Magnetotransport measurements are reported for In0.53Ga0.47As layers grown by molecular beam epitaxy (MBE) at different substrate temperatures (T-s) and either delta or slab-doped with Si. Multiple subband densities deduced from the Fourier analysis of 1.2 K Shubnikov-de Haas measurements are compared with those derived from self-consistent calculations which include nonparabolicity and the doping profile width w(Si) as a fitting parameter. Significant spreading of the Si donors away from the doping plane is deduced for deposition at T-s approximate to 520 degrees C, while no measurable migration is inferred for T-s less than or equal to 470 degrees C, leading to near-ideal delta-doping behavior. Contrary to previous results [McElhinney et al., J. Cryst. Growth 150, 266 (1995)], no evidence for amphoteric behavior has been found for Si areal densities up to 4 X 10(12) cm(-2). (C) 1996 American Institute of Physics.
Institution and School/Department of submitter: Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών
Keywords: gaas,modfets,si
URI: http://olympias.lib.uoi.gr/jspui/handle/123456789/13758
ISSN: 0003-6951
Link: <Go to ISI>://A1996TU82800022
Publisher: American Institute of Physics
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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