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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | McElhinney, M. | en |
| dc.contributor.author | Vogele, B. | en |
| dc.contributor.author | Holland, M. C. | en |
| dc.contributor.author | Stanley, C. R. | en |
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Long, A. R. | en |
| dc.contributor.author | Johnson, E. A. | en |
| dc.date.accessioned | 2015-11-24T17:32:37Z | - |
| dc.date.available | 2015-11-24T17:32:37Z | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13758 | - |
| dc.rights | Default Licence | - |
| dc.subject | gaas | en |
| dc.subject | modfets | en |
| dc.subject | si | en |
| dc.title | 1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in delta- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.116105 | - |
| heal.identifier.secondary | <Go to ISI>://A1996TU82800022 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1996 | - |
| heal.abstract | Magnetotransport measurements are reported for In0.53Ga0.47As layers grown by molecular beam epitaxy (MBE) at different substrate temperatures (T-s) and either delta or slab-doped with Si. Multiple subband densities deduced from the Fourier analysis of 1.2 K Shubnikov-de Haas measurements are compared with those derived from self-consistent calculations which include nonparabolicity and the doping profile width w(Si) as a fitting parameter. Significant spreading of the Si donors away from the doping plane is deduced for deposition at T-s approximate to 520 degrees C, while no measurable migration is inferred for T-s less than or equal to 470 degrees C, leading to near-ideal delta-doping behavior. Contrary to previous results [McElhinney et al., J. Cryst. Growth 150, 266 (1995)], no evidence for amphoteric behavior has been found for Si areal densities up to 4 X 10(12) cm(-2). (C) 1996 American Institute of Physics. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1996-K Shu.pdf | 392.28 kB | Adobe PDF | View/Open |
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