Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14566| Title: | Surface segregation of Si in delta-doped In0.53Ga0.47As grown by molecular beam epitaxy |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | semiconductors,gaas |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/14566 |
| ISSN: | 0022-0248 |
| Link: | <Go to ISI>://A1997XL45100041 |
| Publisher: | Elsevier |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1997-Surface segregation of Si.pdf | 419.57 kB | Adobe PDF | View/Open Request a copy |
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