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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14532
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dc.contributor.authorHastas, N. A.en
dc.contributor.authorDimitriadis, C. A.en
dc.contributor.authorPatsalas, P.en
dc.contributor.authorPanayiotatos, Y.en
dc.contributor.authorTassis, D. H.en
dc.contributor.authorLogothetidis, S.en
dc.date.accessioned2015-11-24T17:38:41Z-
dc.date.available2015-11-24T17:38:41Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14532-
dc.rightsDefault Licence-
dc.subjectdiamond-like carbonen
dc.subjectnitride thin-filmsen
dc.subjecttitanium nitrideen
dc.subjectn-typeen
dc.subjectinterfaceen
dc.subjectcontactsen
dc.titleStructural, electrical, and low-frequency-noise properties of amorphous-carbon-silicon heterojunctionsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1063/1.1346654-
heal.identifier.secondary<Go to ISI>://000167133000052-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2001-
heal.abstractThe structural, electrical, and low-frequency-noise properties of heterojunctions of amor- phous-carbon (a-C) films grown on either n- or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias V-b, from +10 to -200 V. The study includes measurements of x-ray reflectivity (XRR), low-frequency noise at room temperature, and dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for V-b = -200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I-V and C-V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states. (C) 2001 American Institute of Physics.en
heal.publisherAmerican Institute of Physicsen
heal.journalNameJournal of Applied Physicsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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