Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14512
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAbadias, G.en
dc.contributor.authorKoutsokeras, L. E.en
dc.contributor.authorGuerin, P.en
dc.contributor.authorPatsalas, P.en
dc.date.accessioned2015-11-24T17:38:34Z-
dc.date.available2015-11-24T17:38:34Z-
dc.identifier.issn0040-6090-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14512-
dc.rightsDefault Licence-
dc.subjectstressen
dc.subjectgradientsen
dc.subjectin situen
dc.subjectmagnetron sputteringen
dc.subjectternary nitrideen
dc.subjecttinen
dc.subjectzrnen
dc.subjecttanen
dc.subjectdeposited thin-filmsen
dc.subjectpreferred orientationen
dc.subjectnitride filmsen
dc.subjectgrowthen
dc.subjectcoatingsen
dc.subjectgradientsen
dc.subjectthicknessen
dc.subjectsystemsen
dc.titleStress evolution in magnetron sputtered Ti-Zr-N and Ti-Ta-N films studied by in situ wafer curvature: Role of energetic particlesen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDOI 10.1016/j.tsf.2009.07.183-
heal.identifier.secondary<Go to ISI>://000272861500038-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0040609009013340/1-s2.0-S0040609009013340-main.pdf?_tid=712e111480b439ebdba4b13d4eaf5e72&acdnat=1339755600_13c13dae600e8a42809a573bf303473f-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2009-
heal.abstractStress evolution during reactive magnetron sputtering of binary TiN, ZrN and TaN thin films as well as ternary Ti-Zr-N and Ti-Ta-N solid-solutions was studied using real-time wafer curvature measurements. The energy of the incoming particles (sputtered atoms, backscattered At, ions) was tuned by changing either the metal target (M(Ti) = 47.9, M(Zr) = 91.2 and M(Ta) = 180.9 g/mol), the plasma conditions (effect of pressure, substrate bias or magnetron configuration) for a given target or by combining different metal targets during co-sputtering. Experimental results were discussed using the average energy of the incoming species, as calculated using Monte-Carlo simulations (SRIM code). In the early stage of growth, a rapid evolution to compressive stress states is noticed for all films. A reversal towards tensile stress is observed with increasing thickness at low energetic deposition conditions, revealing the presence of stress gradients. The tensile stress is ascribed to the development of a 'zone T' columnar growth with intercolumnar voids and rough surface. At higher energetic deposition conditions, the atomic peening mechanism is predominant: the stress remains largely compressive and dense films with more globular microstructure and smooth surface are obtained. (C) 2009 Elsevier B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameThin Solid Filmsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Files in This Item:
File Description SizeFormat 
Abadias-2009-Stress evolution in.pdf456.52 kBAdobe PDFView/Open    Request a copy


This item is licensed under a Creative Commons License Creative Commons